- patented trench mos barrier schottky technology - excellent high temperature stability - low forward voltage - lower power loss/ high efficiency - high forward surge capability symbol unit v rrm v dv/dt v/ s v br v i f = 5a i f = 7.5a i f = 15a i f = 5a i f = 7.5a i f = 15a t j = 25c a t j = 125c ma r jc o c/w t j o c t stg o c document number: ds_d1401025 version: b14 - halogen-free according to iec 61249-2-21 definition molding compound meets ul 94 v-0 flammability rating base p/n with suffix "g" on packing code - halogen-free, rohs compliant terminal: matte tin plated leads, solderable per jesd22-b102 meet jesd 201 class 1a whisker test TSF30H120C 150 taiwan semiconductor a i f(av) ito-220ab per device - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode parameter polarity: as marked weight: 1.7g (approximately) 1500 120 operating junction temperature range storage temperature range - 55 to +150 - 55 to +150 typical thermal resistance per diode 4.5 mechanical data maximum average forward rectified current 10000 mounting torque: 5 in-lbs. max. maximum ratings and electrical characteristics (ta=25 o c unless otherwise noted) voltage rate of change (rated v r ) per diode case: ito-220ab maximum repetitive peak reverse voltage 0.58 - - min. isolation voltage from terminal to heatsink t = 1 min v ac typ. max. breakdown voltage ( ir =1.0ma, ta =25c ) - trench mos barrier schottky rectifier TSF30H120C 120 v a 0.93 features 30 i fsm 15 - instantaneous forward voltage per diode ( note1 ) t j = 25c v f -0.65- t j = 125c v f - - 500 - v -0.70- -0.81 0.53 -20 note 1: pulse test with pulse width=300 s, 1% duty cycle - - 0.67 0.75 instantaneous reverse current per diode at rated reverse voltage i r -
part no. document number: ds_d1401025 version: b14 TSF30H120C c0 TSF30H120C c0 TSF30H120C c0g TSF30H120C c0 g green compound tsh30h120c c0 suffix "g" ito-220ab 50 / tube preferred p/n part no. packing code green compound code description ratings and characteristics curves TSF30H120C taiwan semiconductor (ta=25 o c unless otherwise noted) ordering information packing code green compound code package packing example 0.00001 0.0001 0.001 0.01 0.1 1 10 10 20 30 40 50 60 70 80 90 100 tj=25 o c tj=125 o c tj=100 o c tj=150 o c 10 100 1000 10000 0.1 1 10 100 f=1.0mhz vslg=50mvp-p 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 tj=25 o c tj=125 o c tj=150 o c tj=100 o c fig. 2 typical forward characteristics 0 5 10 15 20 25 30 35 40 0 255075100125150 with heatsink 4in x 6in x 0.25in al-plate fig.1 forward current derating curve average forward current (a) instantaneous forward current (a) capacitance (pf) instantaneous reverse current (ma) fig. 4 typical junction capacitance fig. 3 typical reverse characteristics case temperature ( o c) forward voltage (v) reverse voltage (v) percent of rated peak reverse voltage.(%)
package outline dimensions min max min max a 4.30 4.70 0.169 0.185 b 2.50 3.16 0.098 0.124 c 2.30 2.96 0.091 0.117 d 0.46 0.76 0.018 0.030 e 6.30 6.90 0.248 0.272 f 9.60 10.30 0.378 0.406 g 3.00 3.40 0.118 0.134 h 0.95 1.45 0.037 0.057 i 0.50 0.90 0.020 0.035 j 2.40 3.20 0.094 0.126 k 14.80 15.50 0.583 0.610 l - 4.10 - 0.161 m 12.60 13.80 0.496 0.543 n - 1.45 - 0.057 o 2.41 2.67 0.095 0.105 p/n = specific device code g = green compound yww = date code f = factory code document number: ds_d1401025 version: b14 TSF30H120C taiwan semiconductor marking diagram dim. unit (mm) unit (inch)
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